Thermally stable In0.7Ga0.3As/In0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallization
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2014
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/29/3/035009